IKW50N65SS5 Description
Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-09-22 IKW50N65SS5 CoolSiC™ Hybrid Discrete Table of contents Table of contents Description.
IKW50N65SS5 Key Features
- VCE = 650 V
- IC = 50 A
- Ultra-low switching losses due to the bination of TRENCHSTOPTM 5 and CoolSiCTM
- Very low on-state losses
- Benchmark efficiency in hard switching topologies
- Plug-and-play replacement of pure silicon devices
- Maximum junction temperature Tvjmax = 175°C
- Qualified according to JEDEC for target