IKW50N65SS5 - S5 IGBT

Datasheet Summary

Description

Package pin definition: Pin G - gate Pin C & backside - collector Pin E - emitter TO-247 3Pin 2021-10-27 restricted Copyright © Infineon T C Type IKW50N65SS5 G E Package PG-TO247-3 Marking K50ESS5 Datasheet www.infineon.com Please read the sections "

Features

VCE = 650 V.
IC = 50 A.
Ultra-low switching losses due to the combination of.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IKW50N65SS5
Manufacturer	Infineon
File Size	1.40 MB
Description	S5 IGBT
Datasheet	IKW50N65SS5 Datasheet
Additional preview pages of the IKW50N65SS5 datasheet.

📁 Similar Datasheet

IKW50N65F5 - IGBT (Infineon Technologies)
IKW50N65F5A - IGBT (Infineon Technologies)
IKW50N65H5 - High speed 5 IGBT (Infineon Technologies)
IKW50N60H3 - IGBT (Infineon Technologies)
IKW50N60T - IGBT (Infineon Technologies)
IKW03N120H2 - HighSpeed 2-Technology (Infineon Technologies)
IKW08T120 - IGBT (Infineon Technologies)
IKW15T120 - IGBT (Infineon Technologies)
IKW20N60H3 - IGBT (Infineon Technologies)
IKW20N60T - IGBT (Infineon Technologies)

Other Datasheets by Infineon

IKW50N65EH5 - High speed 5 IGBT
IKW50N65ES5 - IGBT
IKW50N65ET7 - IGBT
IKW50N65H5A - IGBT
IKW50N65WR5 - Reverse conducting IGBT
IKW50N60DTP - IGBT
IKW50N60TA - IGBT
IKW08N120CS7 - 1200V IGBT

Full PDF Text Transcription

Click to expand full text

IKW50N65SS5 CoolSiC™ Hybrid Discrete CoolSiC™ Hybrid Discrete - TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation CoolSiC™ diode Features • VCE = 650 V • IC = 50 A • Ultra-low switching losses due to the combination of TRENCHSTOPTM 5 and CoolSiCTM technology • Very low on-state losses • Benchmark efficiency in hard switching topologies • Plug-and-play replacement of pure silicon devices • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.

Published: May 18, 2025 |