IKW50N65H5 - High speed 5 IGBT

Datasheet Summary

Description

Features

C High speed H5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with RAPID 1 fast and soft antiparallel diode.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

Infineon Technologies

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Datasheet Details

Part number	IKW50N65H5
Manufacturer	Infineon Technologies
File Size	2.13 MB
Description	High speed 5 IGBT
Datasheet	IKW50N65H5 Datasheet
Additional preview pages of the IKW50N65H5 datasheet.

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Full PDF Text Transcription

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IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKW50N65H5 650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKW50N65H5 Highspeedswitchingseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplatin

Published: Mar 11, 2015 |