IKW50N65EH5 - High speed 5 IGBT

Product Overview

Infineon

Datasheet Details

Part number	IKW50N65EH5
Manufacturer	Infineon
File Size	1.54 MB
Description	High speed 5 IGBT
Datasheet	IKW50N65EH5 Datasheet
Additional preview pages of the IKW50N65EH5 datasheet.

Product details

Description

Package pin definition: Pin G - gate Pin C & backside - collector Pin E - emitter C Type IKW50N65EH5 G E Package PG-TO247-3 Marking K50EEH5 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-11-09 IKW50N65EH5 High speed 5 IGBT in TRENCHSTOP™ 5 technology Table of contents Table of contents Description

Features

VCE = 650 V.
IC = 50 A.
Best-in-class efficiency in hard switching and resonant topologies.
Plug and play replacement of previous generation IGBTs.
650 V breakdown voltage.
Low gate charge QG.
IGBT co-packed with full-rated RAPID 1 fast and soft antiparallel diode.
Maximum junction temperature Tvjmax = 175°C.
Qualified according to JEDEC for target.

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Published: Mar 3, 2016 |