IKW50N65EH5
Features
- VCE = 650 V
- IC = 50 A
- Best-in-class efficiency in hard switching and resonant topologies
- Plug and play replacement of previous generation IGBTs
- 650 V breakdown voltage
- Low gate charge QG
- IGBT co-packed with full-rated RAPID 1 fast and soft antiparallel diode
- Maximum junction temperature Tvjmax = 175°C
- Qualified according to JEDEC for target applications
- Pb-free lead plating; Ro HS pliant
- plete product spectrum and PSpice Models: http://.infineon./igbt/ Potential applications
- Uninterruptible power supplies
- Solar converters
- Welding converters
- Mid to high range switching frequency converters
TO-247
- 3Pin
2021-10-27 restricted
Copyright © Infineon T
Description
Package pin definition:
- Pin G
- gate
- Pin C & backside
- collector
- Pin E
- emitter
Type IKW50N65EH5
Package PG-TO247-3
Marking K50EEH5
Datasheet .infineon.
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10 2022-11-09
IKW5...
