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IKW50N65EH5 Datasheet High speed 5 IGBT

Manufacturer: Infineon

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General Description

Package pin definition: • Pin G - gate • Pin C & backside - collector • Pin E - emitter C Type IKW50N65EH5 G E Package PG-TO247-3 Marking K50EEH5 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-11-09 IKW50N65EH5 High speed 5 IGBT in TRENCHSTOP™ 5 technology Table of contents Table of contents Description .

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Overview

IKW50N65EH5 High speed 5 IGBT in TRENCHSTOP™ 5 technology High speed 5 IGBT in TRENCHSTOP™ 5 technology co-packed with full-rated RAPID 1 fast and soft antiparallel.

Key Features

  • VCE = 650 V.
  • IC = 50 A.
  • Best-in-class efficiency in hard switching and resonant topologies.
  • Plug and play replacement of previous generation IGBTs.
  • 650 V breakdown voltage.
  • Low gate charge QG.
  • IGBT co-packed with full-rated RAPID 1 fast and soft antiparallel diode.
  • Maximum junction temperature Tvjmax = 175°C.
  • Qualified according to JEDEC for target.

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