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IKW50N65EH5 - High speed 5 IGBT

Description

Package pin definition: Pin G - gate Pin C & backside - collector Pin E - emitter C Type IKW50N65EH5 G E Package PG-TO247-3 Marking K50EEH5 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1

Features

  • VCE = 650 V.
  • IC = 50 A.
  • Best-in-class efficiency in hard switching and resonant topologies.
  • Plug and play replacement of previous generation IGBTs.
  • 650 V breakdown voltage.
  • Low gate charge QG.
  • IGBT co-packed with full-rated RAPID 1 fast and soft antiparallel diode.
  • Maximum junction temperature Tvjmax = 175°C.
  • Qualified according to JEDEC for target.

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Datasheet Details

Part number IKW50N65EH5
Manufacturer Infineon
File Size 1.54 MB
Description High speed 5 IGBT
Datasheet download datasheet IKW50N65EH5 Datasheet
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IKW50N65EH5 High speed 5 IGBT in TRENCHSTOP™ 5 technology High speed 5 IGBT in TRENCHSTOP™ 5 technology co-packed with full-rated RAPID 1 fast and soft antiparallel diode Features • VCE = 650 V • IC = 50 A • Best-in-class efficiency in hard switching and resonant topologies • Plug and play replacement of previous generation IGBTs • 650 V breakdown voltage • Low gate charge QG • IGBT co-packed with full-rated RAPID 1 fast and soft antiparallel diode • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.
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