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IKW50N65H5A - IGBT

Datasheet Summary

Description

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Features

  • C High speed H5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • Plug and play replacement of previous generation IGBTs.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • IGBT copacked with RAPID 1 fast and soft antiparallel diode.
  • Maximum junction temperature 175°C.
  • Qualified according to AEC-Q101.
  • Green package (RoHS compliant).
  • Complete product spectrum and PSpice Models: http.

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Datasheet Details

Part number IKW50N65H5A
Manufacturer Infineon
File Size 2.07 MB
Description IGBT
Datasheet download datasheet IKW50N65H5A Datasheet
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IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKW50N65H5A 650VDuoPackIGBTanddiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKW50N65H5A Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode  FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant
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