Datasheet4U.com

IMBF170R650M1 - Silicon Carbide MOSFET

Product Overview

Infineon

📥 Download Datasheet

IMBF170R650M1 Silicon Carbide MOSFET by Infineon - Datasheet Preview — Datasheet preview – IMBF170R650M1

Datasheet Details

Part number	IMBF170R650M1
Manufacturer	Infineon
File Size	1.24 MB
Description	Silicon Carbide MOSFET
Datasheet	IMBF170R650M1 Datasheet
Additional preview pages of the IMBF170R650M1 datasheet.

Product details

Features

Revolutionary semiconductor material - Silicon Carbide.
Optimized for fly-back topologies.
12V/0V gate-source voltage compatible with most fly-back controllers.
Very low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
Fully controllable dV/dt for EMI optimization Benefits.
Reduction of system complexity.
Directly drive from fly-back controller.
Efficiency improvement and cooling effort reduction.
Enabling higher frequency Pot.

📁 Similar Datasheet

IMB-G41A - MicroATX LGA775 Motherboard User Manual (IEI)
IMB10A - Dual Digital Transistor (Rohm)
IMB10AFRA - PNP -100mA -50V Complex Digital Transistors (ROHM)
IMB11A - Dual Digital Transistor (Rohm)
IMB17A - Dual Digital Transistor (Rohm)
IMB1A - Dual Digital Transistor (Rohm)
IMB201 - 2 Duo ATX Industrial Motherboard (Axiomtek)
IMB203 - 2 Duo ATX Industrial Motherboard (Axiomtek)

Other Datasheets by Infineon

IMBF170R1K0M1 - 1700V SiC Trench MOSFET
IMBG120R008M2H - Silicon Carbide MOSFET
IMBG120R012M2H - 1200V SiC MOSFET
IMBG120R017M2H - 1200V SiC MOSFET
IMBG120R022M2H - 1200V SiC MOSFET
IMBG120R026M2H - 1200V SiC MOSFET

Published: Aug 5, 2023 |