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IMBF170R1K0M1

Manufacturer: Infineon
IMBF170R1K0M1 datasheet preview

Datasheet Details

Part number IMBF170R1K0M1
Datasheet IMBF170R1K0M1-Infineon.pdf
File Size 1.26 MB
Manufacturer Infineon
Description 1700V SiC Trench MOSFET
IMBF170R1K0M1 page 2 IMBF170R1K0M1 page 3

IMBF170R1K0M1 Overview

Pin 1 Gate Pin 2 Kelvin sense contact Pin 3…7 Source Tab Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction remended for forward operation mode only Type IMBF170R1K0M1 Package PG-TO263-7-U01 Marking 170M11K0 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-03-22 IMBF170R1K0M1 CoolSiC™ 1700...

IMBF170R1K0M1 Key Features

  • VDSS = 1700 V at Tvj = 25°C
  • IDDC = 5.2 A at TC = 25°C
  • RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C
  • Optimized for fly-back topologies
  • 12 V / 0 V gate-source voltage patible with most fly-back controllers
  • Very low switching losses
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V
  • Fully controllable dv/dt for EMI optimization
  • Reduction of system plexity
  • Directly drive from fly-back controller
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