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IMBF170R1K0M1 - 1700V SiC Trench MOSFET

General Description

Pin definition: Pin 1 Gate Pin 2 Kelvin sense contact Pin 3…7 Source Tab Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction recommended for forward operation mode only T

Key Features

  • VDSS = 1700 V at Tvj = 25°C.
  • IDDC = 5.2 A at TC = 25°C.
  • RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C.
  • Optimized for fly-back topologies.
  • 12 V / 0 V gate-source voltage compatible with most fly-back controllers.
  • Very low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V.
  • Fully controllable dv/dt for EMI optimization 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved.

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IMBF170R1K0M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V at Tvj = 25°C • IDDC = 5.2 A at TC = 25°C • RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C • Optimized for fly-back topologies • 12 V / 0 V gate-source voltage compatible with most fly-back controllers • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Fully controllable dv/dt for EMI optimization 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved.