IMBF170R1K0M1 - 1700V SiC Trench MOSFET

Product Overview

Infineon

Datasheet Details

Part number	IMBF170R1K0M1
Manufacturer	Infineon
File Size	1.26 MB
Description	1700V SiC Trench MOSFET
Datasheet	IMBF170R1K0M1 Datasheet
Additional preview pages of the IMBF170R1K0M1 datasheet.

Product details

Description

Pin definition: Pin 1 Gate Pin 2 Kelvin sense contact Pin 3…7 Source Tab Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction recommended for forward operation mode only Type IMBF170R1K0M1 Package PG-TO263-7-U01 Marking 170M11K0 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-03-2

Features

VDSS = 1700 V at Tvj = 25°C.
IDDC = 5.2 A at TC = 25°C.
RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C.
Optimized for fly-back topologies.
12 V / 0 V gate-source voltage compatible with most fly-back controllers.
Very low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Fully controllable dv/dt for EMI optimization 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved.

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Published: May 4, 2025 |