• Part: IMBF170R1K0M1
  • Description: 1700V SiC Trench MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.26 MB
Download IMBF170R1K0M1 Datasheet PDF
Infineon
IMBF170R1K0M1
Features - VDSS = 1700 V at Tvj = 25°C - IDDC = 5.2 A at TC = 25°C - RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C - Optimized for fly-back topologies - 12 V / 0 V gate-source voltage patible with most fly-back controllers - Very low switching losses - Benchmark gate threshold voltage, VGS(th) = 4.5 V - Fully controllable dv/dt for EMI optimization 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. - Reduction of system plexity - Directly drive from fly-back controller - Efficiency improvement and cooling effort reduction - Enabling higher frequency Potential applications - Solar string inverter - Solar central inverter - Industrial UPS - Industrial SMPS - Charger Product validation - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description Pin definition: - Pin 1 - Gate - Pin 2 - Kelvin sense contact - Pin 3…7 - Source - Tab - Drain Note: the source and sense pins are not exchangeable, their...