IMBG120R008M2H - Silicon Carbide MOSFET

Infineon

IMBG120R008M2H Datasheet Preview — Preview of IMBG120R008M2H PDF

Datasheet Details

Part number	IMBG120R008M2H
Manufacturer	Infineon ↗
File Size	1.25 MB
Description	Silicon Carbide MOSFET
Datasheet	IMBG120R008M2H-Infineon.pdf

IMBG120R008M2H Product details

Description

Pin definition: Pin 1 - Gate Pin 2 - Kelvin sense contact Pin 3…7 - Source Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R008M2H Package PG-TO263-7-U01 Marking 12M2H008 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2024-07-01 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 144 A at TC = 100°C.
RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for b.

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Published: Apr 21, 2024 |