Datasheet Details
| Part number | IMBG120R008M2H |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.25 MB |
| Description | Silicon Carbide MOSFET |
| Datasheet |
 IMBG120R008M2H Datasheet
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General Description
Pin definition:
Pin 1 - Gate
Pin 2 - Kelvin sense contact
Pin 3…7 - Source
Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L )
Type IMBG120R008M2H
Package PG-TO263-7-U01
Marki
Key Features
- VDSS = 1200 V at Tvj = 25°C.
- IDDC = 144 A at TC = 100°C.
- RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C.
- Very low switching losses.
- Overload operation up to Tvj = 200°C.
- Short circuit withstand time 2 µs.
- Benchmark gate threshold voltage, VGS(th) = 4.2 V.
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
- Robust body diode for hard commutation.
- . XT interconnection technology for b.