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IMBG120R053M2H - 1200V SiC MOSFET

Description

Pin definition: Pin 1 - Gate Pin 2 - Kelvin sense contact Pin 3…7 - Source Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R053M2H Package PG-TO263-7-U01 Marki

Features

  • VDSS = 1200 V at Tvj = 25°C.
  • IDDC = 29 A at TC = 100°C.
  • RDS(on) = 52.6 mΩ at VGS = 18 V, Tvj = 25°C.
  • Very low switching losses.
  • Overload operation up to Tvj = 200°C.
  • Short circuit withstand time 2 µs.
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V.
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
  • Robust body diode for hard commutation.
  • . XT interconnection technology for b.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IMBG120R053M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 29 A at TC = 100°C • RDS(on) = 52.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance 2021-10-27 restricted • Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Copyright © Infineon Technologies AG 2021. All rights reserved.
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