IMT40R011M2H
IMT40R011M2H is 400V G2 MOSFET manufactured by Infineon.
Features
- Ideal for high frequency switching and synchronous rectification
- mutation robust fast body diode with low Qfr
- Low RDS(on) dependency on temperature
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Remended gate driving voltage 0 V to 18 V
- .XT interconnection technology for best‑in‑class thermal performance
- 100% avalanche tested
Potential applications
- SMPS
- Solar PV inverters
- Energy storage, UPS and battery formation
- Class‑D audio
- Motor drives
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),typ ID Qoss Eoss QG
Key performance parameters
Value
Unit
11.3 mΩ
138 n C
μJ
85 n C
1 2 34 5 6 7 8
TOLL
Tab Tab
8 76 5 4 32 1
Drain Tab
Gate Pin 1
Driver Source Pin 2
- 1: Internal body diode
- 1
Source Pin 3-8
Part number IMT40R011M2H
Package PG‑HSOF‑8
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