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IMT40R036M2H - 400V MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Ideal for high frequency switching and synchronous rectification.
  • Commutation robust fast body diode with low Qfr.
  • Low RDS(on) dependency on temperature.
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V.
  • Recommended gate driving voltage 0 V to 18 V.
  • . XT interconnection technology for best‑in‑class thermal performance.
  • 100% avalanche tested Potential.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IMT40R036M2H Final datasheet CoolSiC™ 400V CoolSiC™ G2 MOSFET Features • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection technology for best‑in‑class thermal performance • 100% avalanche tested Potential applications • SMPS • Solar PV inverters • Energy storage, UPS and battery formation • Class‑D audio • Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),typ ID Qoss Eoss QG Key Performance Parameters Value Unit 400 V 36.4 mΩ 50 A 42 nC 3.