IMT40R011M2H Description
3 Thermal characteristics.
IMT40R011M2H Key Features
- Ideal for high frequency switching and synchronous rectification
- mutation robust fast body diode with low Qfr
- Low RDS(on) dependency on temperature
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Remended gate driving voltage 0 V to 18 V
- XT interconnection technology for best‑in‑class thermal performance
- 100% avalanche tested