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IMT40R011M2H - 400V G2 MOSFET

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Infineon

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IMT40R011M2H 400V G2 MOSFET by Infineon - Datasheet Preview — Datasheet preview – IMT40R011M2H

Datasheet Details

Part number	IMT40R011M2H
Manufacturer	Infineon
File Size	1.43 MB
Description	400V G2 MOSFET
Datasheet	IMT40R011M2H Datasheet
Additional preview pages of the IMT40R011M2H datasheet.

IMT40R011M2H Product details

Description

1 Maximum ratings 3 T

Features

Ideal for high frequency switching and synchronous rectification.
Commutation robust fast body diode with low Qfr.
Low RDS(on) dependency on temperature.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Recommended gate driving voltage 0 V to 18 V.
. XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested Potential.

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Published: May 13, 2024 |