Datasheet Summary
MOSFET
650VCoolSiCªM1SiCTrenchPowerDevice
The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfineoninmorethan20years.Leveragingthewidebandgap SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique binationofperformance,reliabilityandeaseofuse.Suitableforhigh temperatureandharshoperations,itenablesthesimplifiedandcost effectivedeploymentofthehighestsystemefficiency.
Features
- Optimizedswitchingbehaviorathighercurrents
- mutationrobustfastbodydiodewithlowQf
- Superiorgateoxidereliability
- Tj,max=175°Candexcellentthermalbehavior
- LowerRDS(on)andpulsecurrentde...