Datasheet4U.com

IMZ120R030M1H - Silicon Carbide MOSFET

Product Overview

Infineon

📥 Download Datasheet

IMZ120R030M1H Silicon Carbide MOSFET by Infineon - Datasheet Preview — Datasheet preview – IMZ120R030M1H

Datasheet Details

Part number	IMZ120R030M1H
Manufacturer	Infineon
File Size	1.24 MB
Description	Silicon Carbide MOSFET
Datasheet	IMZ120R030M1H Datasheet
Additional preview pages of the IMZ120R030M1H datasheet.

Product details

Features

Very low switching losses.
Threshold-free on state characteristic.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage for easy and simple gate drive.
Fully controllable dV/dt.
Robust body diode for hard commutation.
Temperature independent turn-off switching losses.
Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits.
Efficiency improvement.
Enabling higher frequency.

📁 Similar Datasheet

IMZ1A - General purpose transistor (Rohm)
IMZ2A - Dual Transistor (Rohm)
IMZ4 - General purpose transistor (Rohm)
IMZ88 - GENERAL PURPOSE DUAL TRANSISTOR (UTC)

Other Datasheets by Infineon

IMZ120R045M1 - 1200V SiC Trench MOSFET
IMZ120R060M1H - 1200V SiC Trench MOSFET
IMZ120R090M1H - 1200V SiC MOSFET
IMZ120R140M1H - 1200V SiC MOSFET
IMZ120R220M1H - MOSFET
IMZ120R350M1H - 1200V SiC MOSFET

Published: Dec 31, 2022 |