Datasheet4U Logo Datasheet4U.com

IMZ120R030M1H Silicon Carbide MOSFET

IMZ120R030M1H Description

IMZ120R030M1H IMZ120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET .

IMZ120R030M1H Features

* Very low switching losses
* Threshold-free on state characteristic
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* 0V turn-off gate voltage for easy and simple gate drive
* Fully controllable dV/dt
* Robust body diode for hard commutation
* Temperature independent

IMZ120R030M1H Applications

* Energy generation o Solar string inverter and solar optimizer
* Industrial power supplies o Industrial UPS o Industrial SMPS
* Infrastructure
* Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: t

📥 Download Datasheet

Preview of IMZ120R030M1H PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IMZ1A - General purpose transistor (Rohm)
  • IMZ2A - Dual Transistor (Rohm)
  • IMZ4 - General purpose transistor (Rohm)
  • IMZ88 - GENERAL PURPOSE DUAL TRANSISTOR (UTC)

📌 All Tags

Silicon Carbide MOSFET Infineon
Infineon IMZ120R030M1H-like datasheet