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IMZ120R045M1 - 1200V SiC Trench MOSFET

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Infineon

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IMZ120R045M1 1200V SiC Trench MOSFET by Infineon - Datasheet Preview — Datasheet preview – IMZ120R045M1

Datasheet Details

Part number	IMZ120R045M1
Manufacturer	Infineon
File Size	1.45 MB
Description	1200V SiC Trench MOSFET
Datasheet	IMZ120R045M1 Datasheet
Additional preview pages of the IMZ120R045M1 datasheet.

Product details

Features

Very low switching losses.
Threshold-free on state characteristic.
Wide gate-source voltage range.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage.
Fully controllable dv/dt.
Commutation robust body diode, ready for synchronous rectification.
Easy to use/drive due to sense (driver) source pin for better control of the gate.
Temperature independent turn-off switching losses Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 B.

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Published: Sep 25, 2019 |