IMZ120R045M1 Infineon Datasheet

IMZ120R045M1 Key Features

• Very low switching losses
• Threshold-free on state characteristic
• Wide gate-source voltage range
• Benchmark gate threshold voltage, VGS(th) = 4.5V
• 0V turn-off gate voltage
• Fully controllable dv/dt
• mutation robust body diode, ready for synchronous rectification
• Easy to use/drive due to sense (driver) source pin for better control of the gate
• Temperature independent turn-off switching losses
• Efficiency improvement