Datasheet Summary
Public
IPB015N06NF2S Final datasheet
MOSFET
StrongIRFET™2 Power‑Transistor, 60 V
Features
- Optimized for wide range of applications
- N‑channel, normal level
- 100% avalanche tested
- Pb‑free lead plating; RoHS pliant
- Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified according to JEDEC Standard
Table 1 Parameter VDS RDS(on),max ID Qoss QG (0V..10V)
Key Performance Parameters
Value
Unit
1.5 mΩ
153 nC
155 nC
D²PAK tab
2 1
32 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPB015N06NF2S
Package PG‑TO263‑3
Marking 015N06NS
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