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Infineon Technologies Electronic Components Datasheet

IPB80P03P4-05 Datasheet

Power-Transistor

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IPB80P03P4-05 pdf
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
Product Summary
V DS
R DS(on) (SMD Version)
ID
-30 V
4.7 m
-80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80P03P4-05
IPI80P03P4-05
IPP80P03P4-05
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P0305
4P0305
4P0305
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-40A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-80
-80
-320
410
-80
±20
137
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2008-09-30


Infineon Technologies Electronic Components Datasheet

IPB80P03P4-05 Datasheet

Power-Transistor

No Preview Available !

IPB80P03P4-05 pdf
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
-
-
- - 1.1 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA -30 -
-V
V GS(th) V DS=V GS, I D=-253µA
-2.0
-3.0
-4.0
I DSS
V DS=-24V, V GS=0V,
T j=25°C
-
-0.05
-1 µA
V DS=-24V, V GS=0V,
T j=125°C2)
-
-20 -200
I GSS
V GS=-16V, V DS=0V
-
- -100 nA
R DS(on) V GS=-10V, I D=-80A - 4.1 5 m
V GS=-10V, I D=-80A,
SMD version
-
3.8 4.7
Rev. 1.0
page 2
2008-09-30


Part Number IPB80P03P4-05
Description Power-Transistor
Maker Infineon
Total Page 9 Pages
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IPB80P03P4-05 Datasheet PDF
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