Datasheet Details
| Part number | IPC020N10L3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.94 MB |
| Description | MOSFET |
| Datasheet |
 IPC020N10L3 Datasheet
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| Part number | IPC020N10L3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.94 MB |
| Description | MOSFET |
| Datasheet |
IPC020N10L3 Datasheet
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•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofBSZ440N10LS3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 100 441) 2.1 x 0.96 V mΩ mm2 Thickness 220 µm Drain Gate Source Type/OrderingCode IPC020N10L3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min.
100 1.1 - Values Typ.
Max.
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC020N10L3 DataSheet Rev.2.
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