Datasheet Details
| Part number | IPC218N04N3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 546.03 KB |
| Description | MOSFET |
| Download | IPC218N04N3 Download (PDF) |
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| Part number | IPC218N04N3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 546.03 KB |
| Description | MOSFET |
| Download | IPC218N04N3 Download (PDF) |
|
|
|
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB011N04NG •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:Nitride+Imide PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 40 1.11) 5.9 x 3.7 V mΩ mm2 Thickness 175 µm Drain Gate Source Type/OrderingCode IPC218N04N3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Internal gate resistance Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD RG EAS Min.
40 2 - Values Typ.
Max.
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC218N04N3 DataSheet Rev.2.
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