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IPC218N04N3 - MOSFET

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Part number IPC218N04N3
Manufacturer Infineon
File Size 546.03 KB
Description MOSFET
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Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPB011N04N G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glued Backside metallization: NiV system Frontside metallization: AlCu system Passivation: Nitride + Imide Power MOS Transistor Chip Table 1 Key Performance Parameters

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