Datasheet Details
| Part number | IPC26N10NR |
|---|---|
| Manufacturer | Infineon |
| File Size | 887.93 KB |
| Description | MOSFET |
| Download | IPC26N10NR Download (PDF) |
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| Part number | IPC26N10NR |
|---|---|
| Manufacturer | Infineon |
| File Size | 887.93 KB |
| Description | MOSFET |
| Download | IPC26N10NR Download (PDF) |
|
|
|
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP05CN10NG1) •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 100 5.42) 6.0 x 4.36 V mΩ mm2 Thickness 250 µm Drain Gate Source Type/OrderingCode IPC26N10NR Package Chip Marking not defined RelatedLinks - 1) IPP05CN10N G dynamic characterization does not include the internal added RG 2) packaged in a P-TO220-3-1 (see ref.
product) Final Data Sheet 2 Rev.2.5,2014-10-03 OptiMOS™2PowerMOSTransistorChip IPC26N10NR 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Internal gate resistance Additional gate resistor Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD RG RGadd EAS Min.
100 2 - Values Typ.
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™2PowerMOSTransistorChip IPC26N10NR DataSheet Rev.2.
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