Datasheet Details
| Part number | IPC302N25N3A |
|---|---|
| Manufacturer | Infineon |
| File Size | 580.89 KB |
| Description | MOSFET |
| Download | IPC302N25N3A Download (PDF) |
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| Part number | IPC302N25N3A |
|---|---|
| Manufacturer | Infineon |
| File Size | 580.89 KB |
| Description | MOSFET |
| Download | IPC302N25N3A Download (PDF) |
|
|
|
•N-channelenhancementmode •Foradditionalcharacteristicandmaxratingrefertothedatasheetof IPP200N25N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) •Package:sawnonfoil PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 250 201) 6.7 x 4.5 V mΩ mm2 Thickness 250 µm Drain Gate Source Type/OrderingCode IPC302N25N3A Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min.
250 2 - Values Typ.
Max.
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC302N25N3A DataSheet Rev.2.
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