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IPD053N08N3 - Power-Transistor

Download the IPD053N08N3 datasheet PDF. This datasheet also covers the IPD053N08N3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 V 5.3 mW 90 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPD053N08N3G_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 V 5.