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IPD096N08N3 - Power-Transistor

Download the IPD096N08N3 datasheet PDF. This datasheet also covers the IPD096N08N3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ideal for high frequency switching.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPD096N08N3G-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IPD09N03LA Power Transistor Infineon Technologies AG

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPD096N08N3 G IPD096N08N3 G Product Summary VDS RDS(on),max ID 80 V 9.