IPD49CN10NG Description
OptiMOS®2 Power-Transistor.
IPD49CN10NG Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- 3.4 K/W
- 10 100 1 100 nA 37 49 mΩ