IPD90N06S4-04 - Power-Transistor

Features

N-channel - Enhancement mode.
AEC qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested IPD90N06S4-04 Product Summary V DS R DS(on),max ID 60 V 3.8 mΩ 90 A PG-TO252-3-11 Type IPD90N06S4-04 Package Marking PG-TO252-3-11 4N0604 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V.

IPD90N06S4-04 Power-Transistor by Infineon - Datasheet Preview — Datasheet preview – IPD90N06S4-04

Datasheet Details

Part number	IPD90N06S4-04
Manufacturer	Infineon
File Size	159.97 KB
Description	Power-Transistor
Datasheet	IPD90N06S4-04 Datasheet
Additional preview pages of the IPD90N06S4-04 datasheet.

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Full PDF Text Transcription

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD90N06S4-04 Product Summary V DS R DS(on),max ID 60 V 3.

Published: May 27, 2015 |