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Infineon Technologies Electronic Components Datasheet

IPD90N06S4-04 Datasheet

Power-Transistor

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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD90N06S4-04
Product Summary
V DS
R DS(on),max
ID
60 V
3.8 m
90 A
PG-TO252-3-11
Type
IPD90N06S4-04
Package
Marking
PG-TO252-3-11 4N0604
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
90
360
331
90
±20
150
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.2
page 1
2009-07-01


Infineon Technologies Electronic Components Datasheet

IPD90N06S4-04 Datasheet

Power-Transistor

No Preview Available !

IPD90N06S4-04
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
-
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1.0 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=90µA
I DSS
V DS=60V, V GS=0V,
T j=25°C
V DS=60V, V GS=0V,
T j=125°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=90A
60 -
-V
2.0 3.0 4.0
- 0.03 1 µA
- 10 100
- - 100 nA
- 3.2 3.8 m
Rev. 1.2
page 2
2009-07-01


Part Number IPD90N06S4-04
Description Power-Transistor
Maker Infineon
Total Page 9 Pages
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