IPD90N03S4L-02
IPD90N03S4L-02 is Power-Transistor manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (Ro HS pliant)
- Ultra low Rds(on)
- 100% Avalanche tested
Product Summary V DS R DS(on),max ID
30 V 2.2 mΩ 90 A
PG-TO252-3-11
Type IPD90N03S4L-02
Package
Marking
PG-TO252-3-11 4N03L02
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=90 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
- Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
- IEC climatic category; DIN IEC 68-1
- Value 90
360 240 90 ±16 136 -55 ... +175 55/175/56
Unit A m J A V W °C
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