• Part: IPD90N04S4L-04
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 151.10 KB
Download IPD90N04S4L-04 Datasheet PDF
Infineon
IPD90N04S4L-04
IPD90N04S4L-04 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 40 V 3.8 mΩ 90 A PG-TO252-3-313 Type IPD90N04S4L-04 Package Marking PG-TO252-3-313 4N04L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 360 95 90 +20/-16 71 -55 ... +175 55/175/56 Unit A m J A V W °C Rev. 1.0 page 1 2010-04-06 Parameter...