• Part: IPD90N04S6-05
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 160.45 KB
Download IPD90N04S6-05 Datasheet PDF
Infineon
IPD90N04S6-05
IPD90N04S6-05 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested - Ultra Low RDSon IPD90N06S4-05 Product Summary V DS R DS(on),max ID 60 V 5.1 mΩ 90 A PG-TO252-3-11 Type IPD90N04S6-05 Package Marking PG-TO252-3-11 4N0605 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 360 135 90 ±20 107 -55 ... +175 55/175/56 Unit A m J A V W °C - Rev. 1.0 page...