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IPD90N06S4-07 - Power-Transistor

Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested.
  • Ultra Low RDSon IPD90N06S4-07 Product Summary V DS R DS(on),max ID 60 V 6.9 mΩ 90 A PG-TO252-3-11 Type IPD90N04S6-07 Package Marking PG-TO252-3-11 4N0607 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain cu.

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Datasheet Details

Part number IPD90N06S4-07
Manufacturer Infineon
File Size 160.70 KB
Description Power-Transistor
Datasheet download datasheet IPD90N06S4-07 Datasheet
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Full PDF Text Transcription

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon IPD90N06S4-07 Product Summary V DS R DS(on),max ID 60 V 6.
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