IPG20N06S2L-65A
IPG20N06S2L-65A is Power-Transistor manufactured by Infineon.
Opti MOS® Power-Transistor
Features
- Dual N-channel Logic Level
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
- Feasible for automatic optical inspection (AOI)
Product Summary VDS RDS(on),max3) ID
55 V 65 mΩ 20 A
PG-TDSON-8-10
Type IPG20N06S2L-65A
Package PG-TDSON-8-10
Marking 2N06L65
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V
Pulsed drain current1) one channel active
I D,pulse
- Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage
E AS I AS V GS
I D=10A
- Power dissipation one channel active
P tot T C=25...
