• Part: IPG20N06S4L-26A
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 298.19 KB
Download IPG20N06S4L-26A Datasheet PDF
Infineon
IPG20N06S4L-26A
IPG20N06S4L-26A is Power-Transistor manufactured by Infineon.
Opti MOS™-T2 Power-Transistor Features - Dual N-channel Logic Level - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested - Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 60 V 26 m W 20 A PG-TDSON-8 Type Package Marking PG-TDSON-8 4N06L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V2) I D,pulse - E AS I AS V...