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IPI041N12N3 Datasheet Power Transistor

Manufacturer: Infineon

Download the IPI041N12N3 datasheet PDF. This datasheet also includes the IPI041N12N3G variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPI041N12N3G_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

Overview

IPP041N12N3 G OptiMOSTM3 Power-Transistor.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant, halogen free.
  • Qualified according to JEDEC1) for target.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IPI041N12N3 N-Channel MOSFET INCHANGE
Infineon Technologies AG Logo IPI041N12N3G Power-Transistor Infineon Technologies AG

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