IPP041N12N3 G OptiMOSTM3 Power-Transistor Feature.
Infineon Technologies AG
IPI041N12N3G - Power-Transistor
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
Infineon
IPI041N12N3 - Power Transistor
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
INCHANGE
IPI041N12N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche .