IPL60R185C7 Datasheet | Infineon

Features - Suitableforhardandsoftswitching(PFCandhighperformance LLC) - Increased MOSFETdv/dtruggednessto120V/ns - Increasedefficiencyduetobestinclass FOMRDS(on)- Eossand RDS(on)- Qg - Bestinclass RDS(on)/package - SMDpackagewithverylowparasiticinductanceforeasydevicecontrol - Qualifiedforindustrialgradeapplicationsaccordingto JEDEC(J-STD20 and JESD22) - 4pinkelvinsourceconcept Benefits - Increasedeconomiesofscalebyusein PFCand PWMtopologiesinthe application - Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency - Enablinghighersystemefficiencybylowerswitchinglosses - Increasedpowerdensitysolutionsduetosmallerpackages - Optimized PCBassemblyandlayoutsolutions - Suitableforapplicationssuchasserver,teleandsolar - Upto0.5%betterfullloadefficiency@100k Hzparedtoconventional 3pinpackage Potentialapplications PFCstagesand PWMstages(TTF,LLC)forhighpower/performance SMPSe.g.puting,Server,Tele,UPSand Solar. Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended. Table1Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse ID,continuous @ Tj<150°C 21 V mΩ n C A A Eoss @ 400V µJ Body diode di F/dt A/µs Type/Ordering Code...