IPL65R195C7 - 650V MOSFET

Infineon

Datasheet Details

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Increased MOSFET dv/dt ruggedness.
Better efficiency due to best in class FOM RDS(on).
Eoss and RDS(on).
Qg.
ThinPAK SMD Package with very low parasitic inductance to enable fast and reliable switching with minimum of size to increase power-density.
Easy to use/drive due to driver source pin for better control of the gate.
Pb-free plating, halogen free mold compound.
Qualified for industrial grade.

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Published: Feb 12, 2016 |