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IPP041N12N3 - Power Transistor

Download the IPP041N12N3 datasheet PDF. This datasheet also covers the IPP041N12N3G variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IPP041N12N3G_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

Overview

IPP041N12N3 G OptiMOSTM3 Power-Transistor.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant, halogen free.
  • Qualified according to JEDEC1) for target.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IPP041N12N3 N-Channel MOSFET INCHANGE
Infineon Technologies AG Logo IPP041N12N3G Power-Transistor Infineon Technologies AG

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