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Infineon Technologies Electronic Components Datasheet

IPP041N12N3 Datasheet

Power Transistor

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IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO-263)
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPI041N12N3 G
IPB038N12N3 G
120 V
3.8 mW
120 A
Type
IPB038N12N3 G IPI041N12N3 G
IPP041N12N3 G
Package
Marking
PG-TO263-3
038N12N
PG-TO262-3
041N12N
PG-TO220-3
041N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 W
Gate source voltage 4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
120
120
480
900
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.3
page 1
2014-04-15


Infineon Technologies Electronic Components Datasheet

IPP041N12N3 Datasheet

Power Transistor

No Preview Available !

IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance,
R thJA minimal footprint
-
junction - ambient
6 cm2 cooling area5)
-
-
0.5 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
120
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=270 µA
2
3
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
-V
4
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=100 V, V GS=0 V,
T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on) V GS=10 V, I D=100 A
-
V GS=10 V, I D=100 A,
-
TO263
RG
-
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
83
10
100
1
100 nA
3.5
4.1 mW
3.2
3.8
1.4
-W
165
-S
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 182 A.
3) See figure 3
4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2014-04-15


Part Number IPP041N12N3
Description Power Transistor
Maker Infineon
PDF Download

IPP041N12N3 Datasheet PDF






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