IPP60R060P7
Overview
- Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness
- Significantreductionofswitchingandconductionlosses
- ExcellentESDrobustness>2kV(HBM)forallproducts
- BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²)
- Fullyqualifiedacc.JEDECforIndustrialApplications Benefits
- Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages
- Simplifiedthermalmanagementduetolowswitchingandconduction losses
- Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection
- Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 60 mΩ Qg,typ 67 nC ID,pulse 151 A Eoss @ 400V
- 1 µJ Body diode diF/dt 900 A/µs Type/OrderingCod
