* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC 1) for target application
* Ideal f
IPT059N15N3 Datasheet (963.28 KB)
IPT059N15N3
963.28 KB
Mosfet.
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª3 Power-Transistor, 150 V IPT059N15N3 Data Sheet Rev. 2.1 Final Power Manag.
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