IPT067N20NM6
IPT067N20NM6 is 200V MOSFET manufactured by Infineon.
MOSFET
OptiMOSTM6Power-Transistor,200V
Features
- N-channel,normallevel
- Verylowon-resistanceRDS(on)
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- Highavalancheenergyrating
- 175°Coperatingtemperature
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
- MSL1classifiedaccordingtoJ-STD-020
- 100%avalanchetested
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
6.7 mΩ
Qoss
226 nC
71 nC
Qrr
339 nC
Type/OrderingCode IPT067N20NM6
Package...
