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Infineon Technologies Electronic Components Datasheet

IRFI1310NPBF Datasheet

Power MOSFET

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Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications
The TO-220 Fullpak eliminates the need for additional insulating
hardware in commercial-industrial applications. The moulding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heatsink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
IRFI1310NPbF
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
100V
0.036
24A
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRFI1310NPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI1310NPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
24
17
140
56
0.37
± 20
420
22
5.6
5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
RJC
Junction-to-Case
RJA
Junction-to-Ambient
Parameter
1
Typ.
–––
–––
Max.
2.7
65
Units
°C/W
2017-04-27


Infineon Technologies Electronic Components Datasheet

IRFI1310NPBF Datasheet

Power MOSFET

No Preview Available !

IRFI1310NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
C
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.036  VGS = 10V, ID = 13A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
14 ––– ––– S VDS = 25V, ID = 22A
––– –––
––– –––
25
250
µA
VDS = 100 V, VGS = 0V
VDS = 80V,VGS = 0V,TJ =150°C
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
––– ––– 120
ID = 22A
––– ––– 15 nC VDS = 80V
––– ––– 58
––– 11 –––
––– 56 –––
––– 45 –––
––– 40 –––
––– 4.5 –––
––– 7.5 –––
VGS = 10V , See Fig. 6 and 13
VDD = 50V
ns
ID =22A
RG= 3.6
RD= 2.9See Fig. 10
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
––– 1900 –––
––– 450 –––
––– 230 –––
VGS = 0V
pF
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
––– 12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
24
140
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.3 V TJ = 25°C,IS = 13A,VGS = 0V 
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– 180 270 ns TJ = 25°C ,IF = 22A
––– 1.2 1.8 C di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting TJ = 25°C, L = 1.0mH, RG = 25, IAS = 22A (See fig. 12)
ISD 22A, di/dt 180A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
t=60s, ƒ=60Hz
Uses IRF1310N data and test conditions.
2
2017-04-27


Part Number IRFI1310NPBF
Description Power MOSFET
Maker Infineon
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