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IRFI1310NPBF Datasheet - Infineon

Power MOSFET

IRFI1310NPBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer w.

IRFI1310NPBF Datasheet (1.81 MB)

Preview of IRFI1310NPBF PDF

Datasheet Details

Part number:

IRFI1310NPBF

Manufacturer:

Infineon ↗

File Size:

1.81 MB

Description:

Power mosfet.
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS  Sink to Lead Creepage Dist. = 4.8mm Ful.

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IRFI1310NPBF Power MOSFET Infineon

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