IRFL4105PBF Datasheet | Infineon

- Surface Mount - Advanced Process Technology - Ultra Low On-Resistance - Dynamic dv/dt Rating - Fast Switching - Fully Avalanche Rated - Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1.0W is possible in a typical surface mount application. G Gate IRFL4105Pb F HEXFET® Power MOSFET VDSS RDS(on) 55V 0.045 3.7A SOT-223 D Drain S Source Base Part Number IRFL4105Pb F Package Type SOT-223 Standard Pack Form Quantity Tape and Reel Orderable Part Number IRFL4105Pb...