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Infineon Technologies Electronic Components Datasheet

IRLI3705NPBF Datasheet

Power MOSFET

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Logic –Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
IRLI3705NPbF
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
55V
0.01
52A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Full Pak eliminates the need for additional insulating
hardware in commercial-industrial applications. The molding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heat sink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heat sink
using a single clip or by a single screw fixing.
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRLI3705NPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRLI3705NPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
52
37
310
58
0.39
± 16
340
46
5.8
5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
RJC
Junction-to-Case
RJA
Junction-to-Ambient
Parameter
1
Typ.
–––
–––
Max.
2.6
65
Units
°C/W
2017-04-27


Infineon Technologies Electronic Components Datasheet

IRLI3705NPBF Datasheet

Power MOSFET

No Preview Available !

IRLI3705NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
C
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.010
VGS = 10V, ID = 28A
––– ––– 0.012  VGS = 5.0V, ID = 28A
––– ––– 0.018
VGS = 4.0V, ID = 24A
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
50 ––– ––– S VDS = 25V, ID = 46A
––– –––
––– –––
25
250
µA
VDS = 55V, VGS = 0V
VDS = 44V,VGS = 0V,TJ =150°C
–––
–––
––– 100
––– -100
nA
VGS = 16V
VGS = -16V
––– ––– 98
ID = 46A
––– ––– 19 nC VDS = 44V
––– ––– 49
––– 12 –––
––– 140 –––
––– 37 –––
––– 78 –––
––– 4.5 –––
––– 7.5 –––
VGS = 5.0V , See Fig. 6 and 13
VDD = 28V
ns
ID = 46A
RG= 1.8VGS = 5.0V
RD= 0.59See Fig. 10
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
––– 3600 –––
VGS = 0V
––– 870
––– 320
–––
–––
pF
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
––– 12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
52
310
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.3 V TJ = 25°C,IS = 28A,VGS = 0V 
trr
Reverse Recovery Time
––– 94 140 ns TJ = 25°C ,IF = 46A
Qrr
Reverse Recovery Charge
––– 290 440 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
VDD = 25V, starting TJ = 25°C, L = 320H, RG = 25, IAS = 46A (See fig. 12)
ISD 46A, di/dt 250A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
t=60s, ƒ=60Hz
Uses IRL3705N data and test conditions.
2
2017-04-27



Part Number IRLI3705NPBF
Description Power MOSFET
Maker Infineon
Total Page 3 Pages
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IRLI3705NPBF Datasheet PDF





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