Datasheet Summary
MOSFET
OptiMOSTM6Power-Transistor,80V
Features
- N-channel,normallevel
- Verylowon-resistanceRDS(on)
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
- Idealforhighfrequencyswitchingandsynchronousrectification
- 175°Coperatingtemperature
- Highavalancheenergyrating
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
8.8 mΩ
Qoss
26 nC
QG(0V...10V)
13.7 nC
Qrr(100A/µs)
28 nC
Type/OrderingCode...