PTFB212503EL Key Features
- 20 ACPR IMD Low
- 25 IMD Up -30 Efficiency
- Broadband internal input and output matchin
- Part: PTFB212503EL
- Description: Thermally-Enhanced High Power RF LDMOS FETs
- Manufacturer: Infineon
- Size: 447.99 KB
Related Infineon Datasheets
| Part Number | Description |
|---|---|
| PTFB212503FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB212507SH | Thermally-Enhanced High Power RF LDMOS FET |
| PTFB210801FA | Thermally-Enhanced High Power RF LDMOS FET |
| PTFB211501E | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211501F | Thermally-Enhanced High Power RF LDMOS FETs |