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SPB80P06PG Datasheet Power Transistor

Manufacturer: Infineon

Download the SPB80P06PG datasheet PDF. This datasheet also includes the SPB80P06P variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SPB80P06P_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

Overview

SPB80P06P G SIPMOS® Power-Transistor.

Key Features

  • Product Summary.
  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A.
  • 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPB80P06P G Package Lead free PG-TO263-3 Yes Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at Tj = 25 °C, unless otherwis.