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SPD30P06PG Datasheet Power Transistor

Manufacturer: Infineon

Download the SPD30P06PG datasheet PDF. This datasheet also includes the SPD30P06P variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SPD30P06P_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

Overview

SPD30P06P G SIPMOS® Power-Transistor.

Key Features

  • Product Summary.
  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.075 Continuous drain current ID -30 A.
  • 175°C operating temperature ° Pb-free lead plating; RoHS compliat ° Qualified according to AEC Q101 Type SPD30P06P G Package PG-TO252-3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed d.