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SPD30P06P Datasheet Power Transistor

Manufacturer: Infineon

Overview: SPD30P06P G SIPMOS® Power-Transistor.

Key Features

  • Product Summary.
  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.075 Continuous drain current ID -30 A.
  • 175°C operating temperature ° Pb-free lead plating; RoHS compliat ° Qualified according to AEC Q101 Type SPD30P06P G Package PG-TO252-3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed d.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo SPD30P06P P-Channel MOSFET INCHANGE
Infineon Logo SPD30P06PG Power Transistor Infineon
VBsemi Logo SPD30P06PG P-Channel MOSFET VBsemi

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