SPD30P06P Description
SPD30P06P G SIPMOS® Power-Transistor.
SPD30P06P Key Features
- P-Channel
- Enhancement mode
- Avalanche rated
- dv/dt rated
- 175°C operating temperature
- 30 -21.5 -120
- 55...+175
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1)
- 0.1 -1