SPD30P06P
SPD30P06P is Power Transistor manufactured by Infineon.
SPD30P06P G
SIPMOS® Power-Transistor
Features
Product Summary
- P-Channel
- Enhancement mode
- Avalanche rated
- dv/dt rated
Drain source voltage
-60 V
W Drain-source on-state resistance RDS(on) 0.075
Continuous drain current
-30 A
- 175°C operating temperature
° Pb-free lead plating; RoHS pliat
° Qualified according to AEC Q101
Type SPD30P06P G
Package PG-TO252-3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse
W ID = -30 A , VDD = -25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = -30 A,...
