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SPD30P06PG - Power Transistor

Download the SPD30P06PG datasheet PDF. This datasheet also covers the SPD30P06P variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Product Summary.
  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.075 Continuous drain current ID -30 A.
  • 175°C operating temperature ° Pb-free lead plating; RoHS compliat ° Qualified according to AEC Q101 Type SPD30P06P G Package PG-TO252-3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed d.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SPD30P06P_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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SPD30N03L SIPMOS Power Transistor Siemens Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPD30P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.