SPD30P06PG
SPD30P06PG is Power Transistor manufactured by Infineon.
- Part of the SPD30P06P comparator family.
- Part of the SPD30P06P comparator family.
Features
Product Summary
- P-Channel
- Enhancement mode
- Avalanche rated
- dv/dt rated
Drain source voltage
-60 V
W Drain-source on-state resistance RDS(on) 0.075
Continuous drain current
-30 A
- 175°C operating temperature
° Pb-free lead plating; Ro HS pliat
° Qualified according to AEC Q101
Type SPD30P06P G
Package PG-TO252-3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse
W ID = -30 A , VDD = -25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = -30 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage
Power dissipation TC = 25 °C Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls EAS EAR dv/dt
VGS Ptot Tj , Tstg
Pin 1 PIN 2/4 PIN 3
Value
-30 -21.5 -120
12.5 6
Unit A m J k...
