| Part Number | SPD30P06PG Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
SPD30P06PG SPD30P06PG P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
0.046 at VGS = - 10 V
0.058 at VGS = - 4.5 V
ID (A)d - 35 - 30
Qg (Typ) 26
TO-252
F.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % UIS Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * High Side Switch for Full Bridge Converter * DC/DC Converter for LCD Display S GDS Top View Drain Connected to Tab G D P-Channel MOSFET ABSOL. |
SPD30P06PG Datasheet and Specifications PDF
The SPD30P06PG is a P-Channel MOSFET.
| Part Number | SPD30P06PG Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Infineon |
| Overview |
SPD30P06P G
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated
Drain source voltage
VDS
-60 V
W Drain-source on-state resistance R.
Product Summary
* P-Channel * Enhancement mode * Avalanche rated * dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.075 Continuous drain current ID -30 A * 175°C operating temperature ° Pb-free lead plating; RoHS compliat ° Qualified according to AE. |