| Part Number | SPD30P06P Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
SPD30P06P G
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated
Drain source voltage
VDS
-60 V
W Drain-source on-state resistance R.
Product Summary
* P-Channel * Enhancement mode * Avalanche rated * dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.075 Continuous drain current ID -30 A * 175°C operating temperature ° Pb-free lead plating; RoHS compliat ° Qualified according to AE. |
SPD30P06P Datasheet and Specifications PDF
The SPD30P06P is a Power Transistor.
| Part Number | SPD30P06P Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot varia.
*Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A) *Advanced trench process technology *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Fast switching application. *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO. |