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BSC0901NS - N-Channel Power MOSFET

General Description

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Key Features

  • Optimized for high performance Buck converter.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription for BSC0901NS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BSC0901NS. For precise diagrams, and layout, please refer to the original PDF.

BSC0901NS MOSFET OptiMOSTMPower-MOSFET,30V Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalancheteste...

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er •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 1.9 mΩ ID 149 A QOSS 25 nC QG(0V..10V) 44 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC0901NS Package PG-TDSON-8 Marking 0901NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS Tableof

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